Boron carbide abrasives have excellent performance in double-sided grinding of sapphire wafer and back thinning and polishing of sapphire based LED epitaxial wafer.
Due to the high strength and hardness of sapphire crystal, it brings great difficulties to processing enterprises. From the perspective of materials and grinding, the best materials for processing and grinding sapphire crystal are synthetic diamond, boron carbide and silicon dioxide. Because the hardness of synthetic diamond is too high, the surface of sapphire wafer will be scratched when grinding, which will affect the transparency of the wafer, and the price is expensive. However, the hardness of silicon dioxide is not enough and the grinding force is poor, which is time-consuming and labor-consuming in grinding engineering. Therefore, boron carbide abrasive becomes the most ideal material for processing and grinding sapphire crystal.
size | grit | mean diameter in um | B % | C % | Fe2O3 % | B4C% |
F-macrogrit | F40 | 425 | 76-80 | 17-21.5 | 0.2-0.4 | 95-99 |
F46 | 355 | |||||
F54 | 300 | |||||
F60 | 250 | |||||
F70 | 212 | |||||
F80 | 180 | |||||
F90 | 150 | |||||
F100 | 125 | |||||
F120 | 106 | |||||
F150 | 75 | |||||
F180 | 75-63 | |||||
F220 | 63-53 | |||||
F-microgrit | F230 | D50=53 | 75-79 | 0.3-0.5 | 95-97 | |
F240 | D50=44.5 | |||||
F280 | D50=36.5 | |||||
F320 | D50=29.5 | |||||
F360 | D50=22.8 | 0.3-0.6 | ||||
F400 | D50=17.3 | |||||
F500 | D50=12.8 | 0.4-0.8 | ||||
F600 | D50=9.3 | 74-79 | 0.3-0.7 | 93-97 | ||
F800 | D50=6.5 | 0.4-0.9 | ||||
F1000 | D50=4.5 | |||||
F1200 | D50=3.0 | 0.5-0.9 | ||||
F1500 | D50=2.0 | |||||
Fine powder | 100#-0 | 150max | 75-80 | 17-21 | 0.3 max | |
200#-0 | 90max | |||||
325#-0 | 45max | |||||
60#-150# | 250-75 | |||||
25um-0 | 25max | |||||
10um-0 | 10max | |||||
3um-0 | 3max |
Reviews
There are no reviews yet.